EDRAM (enhanced dynamic random access memory)

EDRAM (enhanced dynamic random access memory) is dynamic random access memory (dynamic or power-refreshed RAM) that includes a small amount of static RAM (SRAM) inside a larger amount of DRAM so that many memory accesses will be to the faster SRAM. EDRAM is sometimes used as L1 and L2 memory and, together with Enhanced Synchronous Dynamic DRAM, is known as cached DRAM. Data that has been loaded into the SRAM part of the EDRAM can be accessed by the microprocessor in 15 ns (nanoseconds).

EDRAM (enhanced dynamic random access memory) is dynamic random access memory (dynamic or power-refreshed RAM) that includes a small amount of static RAM (SRAM) inside a larger amount of DRAM so that many memory accesses will be to the faster SRAM. EDRAM is sometimes used as L1 and L2 memory and, together with Enhanced Synchronous Dynamic DRAM, is known as cached DRAM.

Data that has been loaded into the SRAM part of the EDRAM can be accessed by the microprocessor in 15 ns (nanoseconds). If data is not in the SRAM, it can be accessed in 35 ns from the DRAM part of the EDRAM.

This was first published in April 2005

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